MD1803DFP Datasheet (STMicroelectronics) - High voltage NPN Power transistor

MD1803DFP, High voltage NPN Power transistor

The MD1803DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure.

The new MD product series show improved silicon efficiency bringing updated performance to the horizontal deflection stage.

RBE=60Ω typ.

Table 1.

Device summary Marking MD1

MD1803DFP Features

* State-of-the-art technology:

* Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrat