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BFY51 - MEDIUM POWER AMPLIFIER

BFY51 Description

BFY50/51 MEDIUM POWER AMPLIFIER .
The BFY50 and BFY52 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case.

BFY51 Applications

* TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM P t ot T stg Tj Parameter BFY50 Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (tp < 5 ms) Total Dissipation at

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📁 Related Datasheet

  • BFY50 - NPN medium power transistors (NXP)
  • BFY52 - NPN medium power transistors (NXP)
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  • BFY56A - NPN Transistor (SGS-ATES)
  • BFY56B - Bipolar NPN Device (Seme LAB)
  • BFY180 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor For low power amplifiers at collector currents from 0.2 to 2.5 mA) (Siemens Semiconductor Group)
  • BFY181 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) (Siemens Semiconductor Group)
  • BFY182 - HiRel NPN Silicon RF Transistor (HiRel Discrete and Microwave Semiconductor) (Siemens Semiconductor Group)

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MEDIUM POWER AMPLIFIER STMicroelectronics
STMicroelectronics BFY51-like datasheet