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AM2931-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM2931-110 Description

AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *...REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABIL.
The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.

AM2931-110 Applications

* . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN. WITH 6.2 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2931-110 BRANDING 2931

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S-BAND RADAR APPLICATIONS MICROWAVE TRANSISTORS STMicroelectronics
STMicroelectronics AM2931-110-like datasheet