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AM2729-110 S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM2729-110 Description

AM2729-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS *...REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABIL.
PIN CONNECTION The AM2729-110 device is a high power silicon bipolar NPN transistor specifically designed for SBand radar pulsed output and driver app.

AM2729-110 Applications

* . . . REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE P OUT = 105 W MIN. WITH 6.5 dB GAIN .400 x .500 2L SFL (S138) hermetically sealed ORDER CODE AM2729-110 BRANDING 272

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S-BAND RADAR APPLICATIONS MICROWAVE TRANSISTORS STMicroelectronics
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