ADP61075W3 Datasheet (STMicroelectronics)

ADP61075W3, SiC MOSFET

carbide Power MOSFET 2nd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification rweocrhkainrTvggehinmhegoiccdAyleeCc.lseTEshtP.risaAcwCtililKoennDsinuRrveIVesrEutepiers.rbTaehcffiioscimepnopcway cientrfsimniaxolpada

ADP61075W3 Features

* Features AACCEEPPAACCKKDDRRIVIEVE ACEPACK DRIVE

* AQG 324 qualified

* D12

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* 3.

* 5 mΩ1o.f2tympicΩaloRfDtSy(opni)cal RDS(on)

* M

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