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40N10F7 N-channel Power MOSFET

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Description

STL40N10F7 N-channel 100 V, 0.02 Ω typ., 10 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Figure 1: Internal s.
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while.

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Features

* Order code STL40N10F7 VDS 100 V RDS(on) max. 0.024Ω ID 10 A PTOT 5W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss/Ciss ratio for EMI immunity

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40N10F7 N-channel Power MOSFET STMicroelectronics
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