Datasheet4U Logo Datasheet4U.com

40N120IHL - IGBT

Download the 40N120IHL datasheet PDF. This datasheet also covers the 40N120 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (40N120-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
40N120 IXEH40N120 IXYS Corporation
40N10 N-Channel MOSFET VBsemi
40N10 N-CHANNEL MOSFET CHONGQING PINGYANG
40N10 N-Channel MOSFET Transistor Inchange Semiconductor
40N10 DTU40N10 DinTek

Other Datasheets by onsemi

Part Number Description
40N120 IGBT
40N120FL2 IGBT
40N60 IGBT
40N60FL IGBT

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co−packaged free wheeling diode with a low forward voltage.
Published: |