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STB80NE06-10 N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET

STB80NE06-10 Description

www.DataSheet4U.com STB80NE06-10 N - CHANNEL ENHANCEMENT MODE ” SINGLE .
TO-263 This Power MOSFET is the latest development of (suffix ”T4”) SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.

STB80NE06-10 Applications

* s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT DataShee ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM (
* ) P t ot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drai

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N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET ST Microelectronics
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