STB3NC90Z Datasheet - ST Microelectronics

STB3NC90Z, N-CHANNEL Power MOSFET

N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET TYPE STB3NC90 s s STB3NC90Z VDSS 900V RDS(on) < 3.5Ω ID 3.5 A s s s TYPI

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

Applications

* APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Cu

STB3NC90Z_STMicroelectronics.pdf