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STB3N62K3 - N-channel Power MOSFET

Description

These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.

Features

  • TAB Order code VDS RDS(on)max. ID Package TAB t(s) 3 1 c D2PAK TO-220 1 23 Produ D(2, TAB) olete G(1) - Obs S(3) AM01475V1 roduct(s) Product status link te P STB3N62K3 Obsole STP3N62K3 STB3N62K3 STP3N62K3 620 V 2.5 Ω.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected 2.7 A D2PAK TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB3N62K3, STP3N62K3 Datasheet N-channel 620 V, 2.2 Ω typ., 2.7 A MDmesh™ K3 Power MOSFETs in D2PAK and TO-220 packages Features TAB Order code VDS RDS(on)max. ID Package TAB t(s) 3 1 c D2PAK TO-220 1 23 Produ D(2, TAB) olete G(1) - Obs S(3) AM01475V1 roduct(s) Product status link te P STB3N62K3 Obsole STP3N62K3 STB3N62K3 STP3N62K3 620 V 2.5 Ω • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected 2.7 A D2PAK TO-220 Applications • Switching applications Description These MDmesh™ K3 Power MOSFETs are the result of improvements applied to STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical structure.
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