DB-55015-490 - RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs

ST Microelectronics

The DB-55015-490 by ST Microelectronics is a RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs. Below is the official datasheet preview.

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DB-55015-490 RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs by ST Microelectronics - Datasheet Preview — Official preview page of the **DB-55015-490** RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs datasheet (ST Microelectronics).

Datasheet Details

Part number	DB-55015-490
Manufacturer	STMicroelectronics
File Size	467.19 KB
Description	RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs
Datasheet	DB-55015-490_STMicroelectronics.pdf
Additional preview pages of the DB-55015-490 datasheet.

DB-55015-490 Product details

Description

The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications.

Features

Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier.

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Published: Jun 9, 2009 |