DB-55008L-318 - RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

ST Microelectronics

The DB-55008L-318 by ST Microelectronics is a RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs. Below is the official datasheet preview.

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DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs by ST Microelectronics - Datasheet Preview — Official preview page of the **DB-55008L-318** RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs datasheet (ST Microelectronics).

Datasheet Details

Part number	DB-55008L-318
Manufacturer	STMicroelectronics
File Size	538.96 KB
Description	RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Datasheet	DB-55008L-318_STMicroelectronics.pdf
Additional preview pages of the DB-55008L-318 datasheet.

DB-55008L-318 Product details

Description

The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications.

Features

Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier.

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Published: Jul 29, 2009 |