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SSF8NP60U - N-Channel MOSFET

SSF8NP60U Description

Main Product Characteristics: VDSS RDS(on) ID 600V 0.73Ω (typ.) 8A ① .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSF8NP60U Features

* High dv/dt and avalanche capabilities
* 100% avalanche tested
* Low input capacitance and gate charge

SSF8NP60U Applications

* Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Sin

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Datasheet Details

Part number
SSF8NP60U
Manufacturer
SILIKRON
File Size
454.51 KB
Datasheet
SSF8NP60U-SILIKRON.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SILIKRON
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