Datasheet4U Logo Datasheet4U.com

SSF10N60 N-Channel MOSFET

SSF10N60 Description

Main Product Characteristics: VDSS RDS(on) 600V 0.69Ω (typ.) ID 10A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSF10N60 Features

* TO-220
* Advanced MOSFET process technology

SSF10N60 Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

📥 Download Datasheet

Preview of SSF10N60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
SSF10N60
Manufacturer
SILIKRON
File Size
504.33 KB
Datasheet
SSF10N60-SILIKRON.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • SSF10N60A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N60B - 600V N-Channel MOSFET (Fairchild Semiconductor)
  • SSF10N65 - 650V N-Channel MOSFET (GOOD-ARK)
  • SSF10N80A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N90A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N90F1 - MOSFET (Silikron Semiconductor)
  • SSF1006 - MOSFET (Silikron)
  • SSF1006A - MOSFET (Silikron)

📌 All Tags

SILIKRON SSF10N60-like datasheet