Datasheet4U Logo Datasheet4U.com

SSF10N60B 600V N-Channel MOSFET

SSF10N60B Description

SSF10N60B November 2001 SSF10N60B 600V N-Channel MOSFET General .
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

SSF10N60B Features

* 6.9A, 600V, RDS(on) = 0.8Ω @VGS = 10 V Low gate charge ( typical 54 nC) Low Crss ( typical 32 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
* ◀ ▲
* G! G D S TO-3PF SSF Series ! S Absolute Maximu

📥 Download Datasheet

Preview of SSF10N60B PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • SSF10N60 - N-Channel MOSFET (SILIKRON)
  • SSF10N60A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N60F - N-Channel MOSFET (SILIKRON)
  • SSF10N65 - 650V N-Channel MOSFET (GOOD-ARK)
  • SSF10N80A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N90A - Advanced Power MOSFET (Samsung Electronics)
  • SSF10N90F1 - MOSFET (Silikron Semiconductor)
  • SSF1006 - MOSFET (Silikron)

📌 All Tags

600V N-Channel MOSFET Fairchild Semiconductor
Fairchild Semiconductor SSF10N60B-like datasheet