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SSF6N80G N-Channel MOSFET

SSF6N80G Description

Main Product Characteristics: VDSS RDS(on) 800V 2.35Ω (typ.) ID 5.5A .
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating.

SSF6N80G Features

* TO-251 (IPAK)
* Advanced MOSFET process technology

SSF6N80G Applications

* Ultra low on-resistance with low gate charge
* Fast switching and reverse body recovery

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Datasheet Details

Part number
SSF6N80G
Manufacturer
SILIKRON
File Size
451.31 KB
Datasheet
SSF6N80G-SILIKRON.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SILIKRON
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