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SSF6NS70G - 700V N-Channel MOSFET

Download the SSF6NS70G datasheet PDF. This datasheet also covers the SSF6NS70G-GOOD variant, as both devices belong to the same 700v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SSF6NS70G/D/F series MOSFET is a new technology, which combines an innovative technology and advance process.

This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.

Features

  • TO-251 SSF6NS70G.
  • High dv/dt and avalanche capabilities.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Lead free product SSF6NS70G/D/F 700V N-Channel MOSFET TO-252 SSF6NS70D TO-220F Schematic Diagram SSF6NS70F.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SSF6NS70G-GOOD-ARK.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SSF6NS70G
Manufacturer GOOD-ARK
File Size 1.06 MB
Description 700V N-Channel MOSFET
Datasheet download datasheet SSF6NS70G Datasheet

📁 Similar Datasheet

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SSF6NS65UF N-Channel MOSFET SILIKRON

Other Datasheets by GOOD-ARK

Part Number Description
SSF6NS70D 700V N-Channel MOSFET
SSF6NS70F 700V N-Channel MOSFET
SSF6NS70UD N-Channel MOSFET
SSF6NS70UG N-Channel MOSFET
SSF6N40D 400V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Main Product Characteristics VDSS 700V RDS(on) 1.2Ω (typ.) ID 5.2A ① Features and Benefits TO-251 SSF6NS70G  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance  Lead free product SSF6NS70G/D/F 700V N-Channel MOSFET TO-252 SSF6NS70D TO-220F Schematic Diagram SSF6NS70F Description The SSF6NS70G/D/F series MOSFET is a new technology, which combines an innovative technology and advance process. This new technology achieves low RDS(ON), energy saving, high reliability and uniformity, superior power density and space saving.
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