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ST 13005
NPN Silicon Power Transistors
for high-voltage, high-speed power switching applications.
Absolute Maximum Ratings (Ta = 25 OC) Parameter
Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation (Ta = 25 OC) Power Dissipation (Tc = 25 OC) Junction Temperature Storage Temperature Range
Characteristics at Ta = 25 OC Parameter
DC Current Gain at VCE = 5 V, IC = 1 A at VCE = 5 V, IC = 2 A Collector Base Cutoff Current at VCB = 700 V Emitter Base Cutoff Current at VEB = 9 V Collector Emitter Breakdown Voltage at IC = 10 mA Collector Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.5 A at IC = 4 A, IB = 1 A Base Emitter Saturation Voltage at IC = 1 A, IB = 0.2 A at IC = 2 A, IB = 0.
ST13005 Datasheet
