Datasheet Details
| Part number | 1N4448WS |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 425.90 KB |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Datasheet |
 1N4448WS-SEMTECH.pdf
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The 1N4448WS is SILICON EPITAXIAL PLANAR DIODE designed by SEMTECH.
| Part number | 1N4448WS |
|---|---|
| Manufacturer | SEMTECH |
| File Size | 425.90 KB |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Datasheet |
1N4448WS-SEMTECH.pdf
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|
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Cathode Anode 12 W2 Top View Marking Code: "W2" Simplified outline SOD-323 and symbol Symbol VRM VR IO IFM IFSM Pd Tj Tstg Value 100 80 150 300 0.5 200 150 - 65 to + 150 Unit V V mA mA A mW OC OC Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 5 mA at IF = 10 mA at IF = 100 mA at IF = 150 mA Reverse Leakage Current at VR = 80 V at VR = 20 V at VR = 75 V, TJ = 150 OC at VR = 25 V, TJ = 150 OC Reverse Breakdown Voltage at IR = 100 µA Capacitance at VR = 0.5 V, f = 1 MHz Rever
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