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HP50N06 60V N-Channel MOSFET

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Description

HP50N06 July 2005 HP50N06 60V N-Channel MOSFET BVDSS = 60 V RDS(on) = 23 mΩ ID = 50 A .

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Datasheet Specifications

Part number
HP50N06
Manufacturer
SEMIHOW
File Size
944.83 KB
Datasheet
HP50N06-SEMIHOW.pdf
Description
60V N-Channel MOSFET

Features

* ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 40 nC (Typ. ) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) : 0.023 Ω (Typ. ) @VGS=10V ‰ 100% Avalanche Tes

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