MBR20200CT - SCHOTTKY RECTIFIER

SANGDEST MICROELECTRONICS

Datasheet Details

Part number	MBR20200CT
Manufacturer	SANGDESTMicroelectronics
File Size	738.34 KB
Description	SCHOTTKY RECTIFIER
Datasheet	MBR20200CT-SANGDESTMICROELECTRONICS.pdf

175 °C TJ operation.
Center tap configuration.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request MBR20200CT Case.

📁 MBR20200CT Similar Datasheet

MBR20200CT-Y - Dual Common Cathode Schottky Rectifier (Taiwan Semiconductor)
MBR20200CTF - Schottky Barrier Rectifier (INCHANGE)
MBR20200CTG - Schottky Barrier Rectifier (American First Semiconductor)
MBR20200CTR - 20 Amperes Heat Sink Dual Common Anode Schottky Half Bridge Rectifiers (Thinki Semiconductor)
MBR20200C - SCHOTTKY BARRIER RECTIFIER (UTC)
MBR20200CA - 20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers (Thinki Semiconductor)
MBR20200CD - Schottky Diode (Yangzhou Yangjie)
MBR20200CG - Power Schottky Rectifier (SIRECT)

Other Datasheets by SANGDEST MICROELECTRONICS

Published: Sep 3, 2015 |