MBR20200 - SCHOTTKY RECTIFIER

SANGDEST MICROELECTRONICS

Datasheet Details

Part number	MBR20200
Manufacturer	SANGDESTMicroelectronics
File Size	144.19 KB
Description	SCHOTTKY RECTIFIER
Datasheet	MBR20200-SANGDESTMICROELECTRONICS.pdf

150 ℃ TJ operation.
Center tap configuration.
Low forward voltage drop.
High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance.
High frequency operation.
Guard ring for enhanced ruggedness and long term reliability.
This is a Pb.
Free Device.
All SMC parts are traceable to the wafer lot.
Additional testing can be offered upon request Mechanical Dimension.

📁 MBR20200 Similar Datasheet

MBR20200C - SCHOTTKY BARRIER RECTIFIER (UTC)
MBR20200CA - 20.0 Ampere Dual Common Anode Schottky Barrier Rectifiers (Thinki Semiconductor)
MBR20200CD - Schottky Diode (Yangzhou Yangjie)
MBR20200CG - Power Schottky Rectifier (SIRECT)
MBR20200CK - SCHOTTKY BARRIER RECTIFIER (MOSPEC)
MBR20200CP - 20.0A SCHOTTKY BARRIER DIODE (Zibo Seno)
MBR20200CR - Power Schottky Rectifier (SIRECT)
MBR20200CS - SCHOTTKY BARRIER RECTIFIER (MOSPEC)

Other Datasheets by SANGDEST MICROELECTRONICS

Published: Nov 16, 2015 |