RU80T4H - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU80T4H
Manufacturer	Ruichips
File Size	301.71 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU80T4H-Ruichips.pdf

RU80T4H Product details

Description

D2 D2 D1 D1 G2 S2 G1 pin1 S1 SOP-8 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resi

Features

80V/4A, RDS (ON) =70mΩ(Typ. )@VGS=10V RDS (ON) =80mΩ(Typ. )@VGS=4.5V RDS (ON) =90mΩ(Typ. )@VGS=2.5V.
Low On-Resistance.
Super High Dense Cell Design.
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 26, 2016 |