RU60E16R - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number: RU60E16R
Manufacturer: Ruichips
File Size: 297.00 KB
Datasheet: RU60E16R-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

RU60E16R Product details

Description

TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS

Features

60V/16A, RDS (ON) =60mΩ(Typ. )@VGS=10V RDS (ON) =75mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 10, 2017 |