RU60E16L - N-Channel Advanced Power MOSFET

Ruichips

📥 Download Datasheet

RU60E16L Datasheet Preview — Preview of RU60E16L PDF

Datasheet Details

Part number: RU60E16L
Manufacturer: Ruichips
File Size: 284.19 KB
Datasheet: RU60E16L-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

RU60E16L Product details

Description

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case Drain-Source Avalanche Ratings ③ EAS Avalanch

Features

60V/16A, RDS (ON) =60mΩ(Typ. )@VGS=10V RDS (ON) =75mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected.
Reliable and Rugged.
100% avalanche tested.
Lead Free and Green Devices Available (RoHS Compliant).

📁 RU60E16L Similar Datasheet

RU602B - N-Channel 60V MOSFET (VBsemi)
RU6055 - Sensors (ifm)
RU6199 - N-Channel Advanced Power MOSFET (Ruichips Semiconductor)

Other Datasheets by Ruichips

RU60E16R - N-Channel Advanced Power MOSFET
RU60E25K - N-Channel Advanced Power MOSFET
RU60E25L - N-Channel Advanced Power MOSFET
RU60E25R - N-Channel Advanced Power MOSFET
RU60E5D - N-Channel Advanced Power MOSFET
RU60E5H - N-Channel Advanced Power MOSFET

Published: Apr 10, 2017 |