RU30E4B - N-Channel Advanced Power MOSFET

Ruichips

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Datasheet Details

Part number	RU30E4B
Manufacturer	Ruichips
File Size	308.56 KB
Description	N-Channel Advanced Power MOSFET
Datasheet	RU30E4B-Ruichips.pdf

RU30E4B Product details

Description

D G S SOT23 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① IDP 300μs Pulse Drain Current Tested ② ID Continuous Drain Current(VGS=10V) PD Maximum Power Dissipation RθJC RθJA③ Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient Dra

Features

30V/4A, RDS (ON) =30mΩ(Typ. )@VGS=10V RDS (ON) =55mΩ(Typ. )@VGS=4.5V.
Super High Dense Cell Design.
ESD protected(Rating 2KV HBM).
Reliable and Rugged.
Lead Free and Green Devices Available (RoHS Compliant).

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Published: Apr 26, 2016 |