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RU30E20H N-Channel Advanced Power MOSFET

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Description

RU30E20H N-Channel Advanced Power MOSFET .
D D D D G S S pin1 S SOP-8 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Dr.

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Datasheet Specifications

Part number
RU30E20H
Manufacturer
Ruichips
File Size
403.67 KB
Datasheet
RU30E20H-Ruichips.pdf
Description
N-Channel Advanced Power MOSFET

Features

* 30V/20A, RDS (ON) =4.6mΩ(Typ. )@VGS=10V RDS (ON) =5.8mΩ(Typ. )@VGS=4.5V RDS (ON) =15mΩ(Typ. )@VGS=2.5V
* Low On-Resistance
* ESD Protected
* Super High Dense Cell Design
* Reliable and Rugged
* Lead Free and Green Devices Available (RoHS Compliant) Appl

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