Datasheet4U.com

AS081Q600W - High Power Stacked Infrared Laser Diode Array

Roithner

📥 Download Datasheet

AS081Q600W Datasheet Preview — Preview of AS081Q600W PDF

datasheet Preview Page 2

Datasheet Details

Part number	AS081Q600W
Manufacturer	Roithner
File Size	112.88 KB
Description	High Power Stacked Infrared Laser Diode Array
Datasheet	AS081Q600W-Roithner.pdf

AS081Q600W Product details

Features

Output Power: 600 W qCW.
780-830 nm Emission Wavelength.
Spectral Width: ≤4 nm.
High Reliability, High Efficiency.
QCW stack can be designed according to the customer of non-standard products heat sink package.

📁 AS081Q600W Similar Datasheet

AS083-LS2 - Human pyroelectric infrared sensor controller (ASCHIP)
AS004M1-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M1-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M2-08 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004M2-11 - GaAs MMIC SPST FET Switch (Alpha Industries)
AS004S2-11 - GaAs IC SPDT Switch (Alpha Industries)
AS006L1-00 - GaAs MMIC SPST FET (Alpha Industries)
AS006L1-01 - GaAs IC SPST Switch (Alpha Industries)

Other Datasheets by Roithner

AS081Q1200W - High Power Stacked Infrared Laser Diode Array
AS081Q15000W - High Power Stacked Infrared Laser Diode Array
AS081Q3000W - High Power Stacked Infrared Laser Diode Array
AS081Q300W - High Power Stacked Infrared Laser Diode Array
AS081Q5000W - High Power Stacked Infrared Laser Diode Array
AS081C100W - High Power Stacked Infrared Laser Diode Array

Published: Mar 12, 2015 |