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RBQ20NS65A - Schottky Barrier Diode

Features

  • 1)Cathode Common Dual type. (LPDS) 2)Low IR. BQ20NS 65A ① lConstruction Silicon epitaxial planer lStructure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day ① ② lTaping dimensions (Unit : mm) ③ www. DataSheet. co. kr lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (.
  • 1) Io IFSM Forward current surge peak (60Hz1cyc) (.
  • 2) Junction temperature Tj Storage temperature Tstg Limits 65 6.

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Datasheet Details

Part number RBQ20NS65A
Manufacturer ROHM
File Size 1.26 MB
Description Schottky Barrier Diode
Datasheet download datasheet RBQ20NS65A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Data Sheet Schottky Barrier Diode RBQ20NS65A lApplications General rectification 　　　lDimensions (Unit : mm) 　lLand size figure (Unit : mm) lFeatures 1)Cathode Common Dual type.(LPDS) 2)Low IR. BQ20NS 65A ① lConstruction Silicon epitaxial planer lStructure ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day ① ② lTaping dimensions (Unit : mm) ③ www.DataSheet.co.kr lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz1cyc) (*2) Junction temperature Tj Storage temperature Tstg Limits 65 65 20 100 150 -40 to +150 Unit V V A A °C °C (*1) 60Hz half sin wave, 1/2 Io per diode. (*2) 60Hz half sin wave, one cycle, non-repetitive at Tj=25 °C.
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