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Schottky Barrier Rectifier
INCHANGE Semiconductor
RBQ30TB45BNZ
FEATURES ·Low Forward Voltage ·Power Mold Type ·High reliability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
MECHANICAL CHARACTERISTICS ·Switching power supply ·Finish: All External Surfaces Corrosion Resistant and
Terminal Leads are Readily Solderable
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
IF(AV)
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 100℃
IFSM
Nonrepetitive Peak Surge Current 60Hz half sin Wave 1cycle
VALUE UNIT
45
V
30
A
100
A
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~175 ℃
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RBQ30TB45BNZ Datasheet
