1) Small power mold type. (PMDU) 2) Low IR 3) High reliability
①
8.0±0.2 12.0±0.2
zConstruction Silicon epitaxial planar
0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5
ROHM : ＴO220FN ① Manufacture Date
zAbsolute maximum ratings (Ta=25°C) Parameter
13.5MIN
15.0±0.4 0.2 8.0
Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (.
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RB215T-90
Diodes
Schottky barrier diode
RB215T-90
zApplications General rectification (Common cathode dual chip) zExternal dimensions (Unit : mm)
4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1
zStructure
1.2 1.3
5.0±0.2
zFeatures 1) Small power mold type. (PMDU) 2) Low IR 3) High reliability
①
8.0±0.2 12.0±0.2
zConstruction Silicon epitaxial planar
0.8 (1) (2) (3) 0.7±0.1 0.05 2.6±0.5
ROHM : ＴO220FN ① Manufacture Date
zAbsolute maximum ratings (Ta=25°C) Parameter
13.5MIN
15.0±0.4 0.2 8.
RB215T-90 Datasheet
