2SD1858 - Medium Power Transistor

Datasheet Details

1) Low VCE(sat) = 0.15V(Typ. ) (lC / lB = 500mA / 50mA) 2) Compliments 2SB1237.
Structure Epitaxial planar type NPN silicon transistor.
Dimensions (Unit : mm) 6.8 +.
0.2 2.5 +.
0.2 4.4.
+ 0.2 1.0 0.9 14.5.
+0.5 0.5+.
0.1 (1) (2) (3) 2.54 2.54 ROHM : ATV 1.05 0.45 +.
0.1 (1) Emitter (2) Collector (3) Base.
Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitte.

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Published: Apr 3, 2005 |