2SD1857 - Power Transistor

Datasheet Details

1) High breakdown voltage. (BVCEO = 120V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency. (fT = 80MHz) 4) Complements the 2SB1236.
Dimensions (Unit : mm) 2SD1857 6.8 2.5 1.0 0.9 14.5 4.4 0.65Max. 0.5 (1) (2) (3) 2.54 2.54 1.05 0.45 ROHM : ATV Taping specifications (1) Emitter (2) Collector (3) Base.
Packaging specifications and hFE Type Package Code hFE Basic ordering unit (pieces) 2SD1857 QR Taping TV2 2500 hFE values are cla.

📁 2SD1857 Similar Datasheet

2SD1857D - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SD1850 - Power Transistor (Inchange Semiconductor)
2SD1851 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1852 - PNP/NPN Epitaxial Planar Silicon Transistors (Sanyo Semicon Device)
2SD1853 - NPN Epitaxial Planar Silicon Darlington Transistor (Sanyo Semicon Device)
2SD1854 - NPN Epitaxial Silicon Transistor (Sanyo Semicon Device)
2SD1855 - NPN Transistor (INCHANGE)
2SD1856 - NPN Transistor (INCHANGE)

Other Datasheets by Rohm

Published: Apr 3, 2005 |