2SB1668 - Power Transistor

Datasheet Details

1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SD2607. !External dimensions (Units : mm) 10.0 4.5 φ 3.2 2.8 15.0 12.0 8.0 5.0 1.2 14.0 1.3 0.8 !Absolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Storage temperature ∗ Single pulse, Pw = 100ms 2.54 2.54 (1) (2) (3) (1) (2.

📁 2SB1668 Similar Datasheet

2SB166040ML - SCHOTTKY BARRIER DIODE CHIPS (Silan Microelectronics Joint-stock)
2SB166100MA - LOW IR SCHOTTKY BARRIER DIODE CHIPS (Silan Microelectronics Joint-stock)
2SB1664 - PNP Epitaxial Planar Silicon Darlington Transistor (Sanyo Semicon)
2SB1667 - Silicon PNP Transistor (Toshiba Semiconductor)
2SB1669 - PNP Transistor (INCHANGE)
2SB1669-Z - Silicon PNP Power Transistor (Inchange Semiconductor)
2SB1602 - TRANSISTOR (Toshiba Semiconductor)
2SB1603 - Silicon PNP Transistor (Panasonic Semiconductor)

Other Datasheets by Rohm

Published: Jul 28, 2010 |