UPD5759T6J Datasheet (Renesas) - Low Noise and High Gain Amplifier

UPD5759T6J, Low Noise and High Gain Amplifier

R09DS0018EJ0100 Rev.1.00 Apr 18, 2011 The μPD5759T6J is a silicon MOS monolithic integrated circuit designed as high gain impedance converter for electret condenser microphone.

This device exhibits low noise and high voltage gain characteristics.

The package is a 3-pin thin-type lead-less minimold

UPD5759T6J Features

* Low noise

* : NV =

* 98 dBV TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : NV =

* 99 dBV TYP. @VDD = 2.0 V, Cin = 5 pF, RL = 2.2 kΩ High gain : GV = +9.0 dB TYP. @VDD = 2.0 V, Cin = 3 pF, RL = 2.2 kΩ : GV = +11.0 dB TYP.