Description
R07DS0003EJ0100 Rev.1.00 May 31, 2010
The μ PA2763 is N-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications.
Features
- Low on-state resistance ⎯ RDS(on)1 = 23.0 mΩ MAX. (VGS = 10 V, ID = 21 A) ⎯ RDS(on)2 = 28.0 mΩ MAX. (VGS = 8 V, ID = 21 A).
- Low Ciss 2100 pF TYP.
- Built-in gate protection diode.
- Thin type surface mount package with heat spreader (8-pin HVSON).
- RoHS Compliant
Absolute Maximum Ratings (TA = 25°C)
Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse) ∗1 Total Power Dissipation∗.
UPA2763_Renesas.pdf
