Description
The μ PA2520 is N-channel MOS Field Effect Transistor
designed for DC/DC converter and power management applications of portable equipments.PACKAGE DRAWING (Unit: mm)
2.9±0.1 0.65 8
5
A
0.17±0.05
Features
- Low on-state resistance
RDS(on)1 = 13.2 mΩ MAX. (VGS = 10 V, ID = 10 A) RDS(on)2 = 17 mΩ MAX. (VGS = 4.5 V, ID = 5.0 A).
- Built-in gate protection diode.
- Small and surface mount package (8-pin VSOF (2429)).
- Pb-free (This product does not contain Pb in external electrode
and other parts. )
0 to 0.025
2.8±0.1 2.4±0.1
1 0.32±0.05
4 0.05 M S A
(0.3)
1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain
0.8±0.05
S.
UPA2520-Renesas.pdf
