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UPA2200T1M - N-CHANNEL MOS FET

Renesas

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Datasheet Details

Part number	UPA2200T1M
Manufacturer	Renesas
File Size	291.65 KB
Description	N-CHANNEL MOS FET
Datasheet	UPA2200T1M-Renesas.pdf

UPA2200T1M Product details

Description

The μ PA2200T1M is N-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

Features

Low on-state resistance RDS(on)1 = 23 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 31 mΩ MAX. (VGS = 4.5 V, ID = 4 A).
Built-in gate protection diode.
4.5 V Gate drive available.

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Published: Aug 3, 2015 |