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UPA2210T1M - P-CHANNEL MOS FET

Description

for power management applications of portable equipments, such as load switch.

Features

  • Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS =.
  • 2.5 V, ID =.
  • 3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS =.
  • 1.8 V, ID =.
  • 3.6 A).
  • Built-in gate protection diode.
  • 1.8 V Gate drive available.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2210T1M P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch. FEATURES • Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS = −4.5 V, ID = −7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS = −2.5 V, ID = −3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS = −1.8 V, ID = −3.6 A) • Built-in gate protection diode • −1.8 V Gate drive available ORDERING INFORMATION PART NUMBER μ PA2210T1M-T1-AT Note μ PA2210T1M-T2-AT Note PACKING 8 mm embossed taping 3000 p/reel PACKAGE 8-pin VSOF (1629) 0.011 g TYP. Note Pb-free (This product does not contain Pb in external electrode and other parts.) 0.225±0.1 PACKAGE DRAWING (Unit: mm) 2.9±0.1 0.
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