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UPA2210T1M - P-CHANNEL MOS FET

Renesas

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Datasheet Details

Part number	UPA2210T1M
Manufacturer	Renesas
File Size	294.92 KB
Description	P-CHANNEL MOS FET
Datasheet	UPA2210T1M-Renesas.pdf

UPA2210T1M Product details

Description

The μ PA2210T1M is P-channel MOS Field Effect Transistor designed for power management applications of portable equipments, such as load switch.

Features

Low on-state resistance RDS(on)1 = 29 mΩ MAX. (VGS =.
4.5 V, ID =.
7.2 A) RDS(on)2 = 41 mΩ MAX. (VGS =.
2.5 V, ID =.
3.6 A) RDS(on)3 = 81 mΩ MAX. (VGS =.
1.8 V, ID =.
3.6 A).
Built-in gate protection diode.
1.8 V Gate drive available.

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Published: Aug 3, 2015 |