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RJU36B1WDPK-M0 Dual Diode

RJU36B1WDPK-M0 Description

Preliminary Datasheet RJU36B1WDPK-M0 Dual Diode Ultra Fast Recovery Diode .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJU36B1WDPK-M0 Features

* Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 10 A, di/dt = 100 A/s)
* Low forward voltage: VF = 1.1 V typ. (at IF = 10 A)
* Low reverse current: IR = 1 A max. (at VR = 360 V) R07DS0667EJ0100 Rev.1.00 Mar 01, 2012 Outline RENESAS Package code: PRSS0004ZH-A (Package nam

RJU36B1WDPK-M0 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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