RJU36B2WDPK-M0 Dual Diode Ultra Fast Recovery Diode

Renesas

Description

Preliminary Datasheet RJU36B2WDPK-M0 Dual Diode Ultra Fast Recovery Diode .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJU36B2WDPK-M0
Manufacturer: Renesas ↗
File Size: 113.00 KB
Datasheet: RJU36B2WDPK-M0_Renesas.pdf
Description: Dual Diode Ultra Fast Recovery Diode

Features

* Ultra fast reverse recovery time: trr = 40 ns typ. (at IF = 20 A, di/dt = 100 A/s)
* Low forward voltage: VF = 1.1 V typ. (at IF = 20 A)
* Low reverse current: IR = 1 A max. (at VR = 360 V) R07DS0668EJ0100 Rev.1.00 Mar 01, 2012 Outline RENESAS Package code: PRSS0004ZH-A (Package nam

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJU36B2WDPK-M0 Dual Diode Ultra Fast Recovery Diode Renesas

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