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RJL5012DPP-M0 - Silicon N Channel MOS FET

RJL5012DPP-M0 Description

RJL5012DPP-M0 Silicon N Channel MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJL5012DPP-M0 Features

* Built-in fast recovery diode
* Low on-resistance RDS(on) = 0.56 Ω typ. (at ID = 6 A, VGS = 10 V, Ta = 25°C)
* Low leakage current
* High speed switching Outline RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL) 1 23 G Absolute Maximum Ratings Item Sym

RJL5012DPP-M0 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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Silicon Channel MOS FET Renesas
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