Datasheet Specifications
- Part number
- RJL6012DPE
- Manufacturer
- Renesas ↗ Technology
- File Size
- 189.34 KB
- Datasheet
- RJL6012DPE_RenesasTechnology.pdf
- Description
- Silicon N Channel MOS FET High Speed Power Switching
Description
www.DataSheet4U.com RJL6012DPE Silicon N Channel MOS FET High Speed Power Switching .
Features
* Built-in fast recovery diode Low on-resistance Low leakage current High speed switching REJ03G1750-0100 Rev.1.00 Oct 26, 2009 Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source 4. Drain 1 G 2 3 S AbsoluApplications
* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informatRJL6012DPE Distributors
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