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RJK6034DPD-E0 N-Channel Power MOSFET

RJK6034DPD-E0 Description

Preliminary Datasheet RJK6034DPD-E0 600 V - 1 A - MOS FET High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

RJK6034DPD-E0 Features

* Low on-resistance RDS(on) = 9.8  typ. (at ID = 0.5 A, VGS = 10 V, Ta = 25C)
* Low leakage current
* High speed switching R07DS0553EJ0100 Rev.1.00 Oct 13, 2011 Outline RENESAS Package code: PRSS0004ZJ-A (Package name : TO-252) 4 1. 2. 3. 4. Gate Drain Source Drain D G 12 3 S Abs

RJK6034DPD-E0 Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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N-Channel Power MOSFET Renesas
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