RJH60T4DPQ-A0 High Speed Power Switching

Renesas

Description

Preliminary Datasheet RJH60T4DPQ-A0 Silicon N Channel IGBT High Speed Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJH60T4DPQ-A0
Manufacturer: Renesas ↗
File Size: 151.29 KB
Datasheet: RJH60T4DPQ-A0_Renesas.pdf
Description: High Speed Power Switching

Features

* Low collector to emitter saturation voltage VCE(sat) = 1.7 V typ. (at IC = 30 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode in one package
* Trench gate and thin wafer technology
* High speed switching R07DS0460EJ0100 Rev.1.00 Jun 15, 2011 Outline RENESAS Package code:

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJH60T4DPQ-A0 High Speed Power Switching Renesas

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