Datasheet4U.com

RJH60D7DPM - IGBT

Renesas

📥 Download Datasheet

RJH60D7DPM Datasheet Preview — Preview of RJH60D7DPM PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	RJH60D7DPM
Manufacturer	Renesas ↗
File Size	165.24 KB
Description	IGBT
Datasheet	RJH60D7DPM_Renesas.pdf

RJH60D7DPM Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (100 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0176EJ0300 Rev.3.00 Apr 19, 2012 Outline.

📁 RJH60D7DPM Similar Datasheet

RJH60D7DPK - IGBT (Renesas Technology)
RJH60D0DPK - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D1DPP-M0 - Silicon N-Channel IGBT (Renesas Technology)
RJH60D2DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D2DPP-M0 - Silicon N Channel IGBT (Renesas Technology)
RJH60D3DPE - Silicon N Channel IGBT (Renesas Technology)
RJH60D5DPK - Silicon N Channel IGBT (Renesas Technology)

Other Datasheets by Renesas

Published: Jul 20, 2012 |