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RJH60D7BDPQ-E0 IGBT

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Description

Preliminary Datasheet RJH60D7BDPQ-E0 600V - 50A - IGBT Application: Inverter R07DS0795EJ0300 Rev.3.00 Jul 20, 2016 .

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Features

* Short circuit withstand time (5 s typ. )
* Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
* Built in fast recovery diode (25 ns typ. ) in one package
* Trench gate and thin wafer technology
* High speed switching tf = 50 n

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