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RJH60D7BDPQ-E0 - IGBT

Renesas

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Datasheet Details

Part number	RJH60D7BDPQ-E0
Manufacturer	Renesas ↗
File Size	322.23 KB
Description	IGBT
Datasheet	RJH60D7BDPQ-E0-Renesas.pdf

RJH60D7BDPQ-E0 Product details

Features

Short circuit withstand time (5 s typ. ).
Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode (25 ns typ. ) in one package.
Trench gate and thin wafer technology.
High speed switching tf = 50 ns typ. (at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline.

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Published: Feb 12, 2017 |