RBN75N125S1UFWA - IGBT

Renesas

Datasheet Details

Renesas generation 8th Trench IGBT.
Low collector to emitter saturation voltage VCE(sat) = 1.8 V typ. (at IC = 75 A, VGE = 15 V, Ta = 25 C).
High speed switching.
Short circuit withstands time (10 s min. ).

📁 RBN75N125S1UFWA Similar Datasheet

Other Datasheets by Renesas

Published: Jan 17, 2025 |