Datasheet4U Logo Datasheet4U.com

RBN200N180S2HFWA - IGBT

Description

and application examples.

Features

  • Renesas generation 8th Trench IGBT.
  • Short circuit withstands time (10 s min. ).
  • Optimized for high power.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
RBN25H125S1FPQ-A0 IGBT
RBN25N125S1UFWA IGBT
RBN100N180S2HFWA IGBT
RBN150N180S2HFWA IGBT
RBN40H125S1FPQ-A0 IGBT

Full PDF Text Transcription

Click to expand full text
RBN200N180S2HFWA 1800V - 400A/200A - IGBT Features  Renesas generation 8th Trench IGBT  Short circuit withstands time (10 s min.)  Optimized for high power application  Unsawn wafer Wafer size = 200 mm  Quality grade: Standard Outline Datasheet R07DS1453EJ0110 Rev.1.10 Apr 11th, 2023 wafer 1.Gate 2.Collector(The back) 3.Emitter Absolute Maximum Ratings (Tj = 25°C unless otherwise noted) Item Symbol Ratings Unit Collector to emitter voltage VCES 1800 V Gate to emitter voltage VGES ±30 V Collector current Tc = 25°C IC 400 Notes1 A Tc = 100°C IC 200 Notes1 A Junction temperature Tj 175 Notes2 C Notes: 1. Depends on thermal properties of assembly. 2. Please use this device in the thermal conditions which the junction temperature does not exceed 175C. 3.
Published: |