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RBN50H65T1FPQ-A0 IGBT

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Description

Datasheet RBN50H65T1FPQ-A0 650V - 50A - IGBT Power Switching R07DS1381EJ0120 Rev.1.20 Aug.03.2020 .

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Features

* Trench gate and thin wafer technology (G8H series)
* High speed switching
* Built in fast recovery diode in one package
* Non-specification for short circuit
* Low collector to emitter saturation voltage

Applications

* UPS, Welding, photovoltaic VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C) inverters, Power converter system
* Quality grade: Standard Key Performance Type RBN50H65T1FPQ-A0 VCES 650 V IC 50 A VCE(sat), TC=25°C 1.5 V IF 50 A Tj 175 C Outline RENESAS Package code: PRSS0003ZH

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